Invention Grant
US08928144B2 3D non-volatile memory device, memory system including the same, and method of manufacturing the same
有权
3D非易失性存储器件，包括其的存储器系统及其制造方法
- Patent Title: 3D non-volatile memory device, memory system including the same, and method of manufacturing the same
- Patent Title (中): 3D非易失性存储器件，包括其的存储器系统及其制造方法
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Application No.: US13599956Application Date: 2012-08-30
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Publication No.: US08928144B2Publication Date: 2015-01-06
- Inventor: Suk Goo Kim
- Applicant: Suk Goo Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0138205 20111220
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A three-dimensional 3D nonvolatile memory device includes vertical channel layers protruding from a substrate; interlayer insulating layers and conductive layer patterns alternately deposited along the vertical channel layers; a barrier metal pattern surrounding each of the conductive layer patterns; a charge blocking layer interposed between the vertical channel layers and the barrier metal patterns; and a diffusion barrier layer interposed between the barrier metal patterns and the charge blocking layer.
Public/Granted literature
- US20130155771A1 3D NON-VOLATILE MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-06-20
Information query
IPC分类:
