Invention Grant
- Patent Title: Electronic circuit and semiconductor device
- Patent Title (中): 电子电路和半导体器件
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Application No.: US14013578Application Date: 2013-08-29
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Publication No.: US08928396B2Publication Date: 2015-01-06
- Inventor: Jun Nagayama , Tomoharu Awaya
- Applicant: Fujitsu Semiconductor Limited
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2012-233171 20121022
- Main IPC: H03K3/01
- IPC: H03K3/01 ; G05F1/10 ; G05F3/02 ; G05F3/16 ; H02M1/14 ; H02M7/48
Abstract:
An electronic circuit includes: first circuits each including a first FET having a source supplied with at least one of a first voltage and a second voltage; and a second circuits each of which is associated with a respective one of the first circuits, and generates a back bias voltage applied to the first FET so as to change in accordance with a change of at least one of the first and second voltages.
Public/Granted literature
- US20140111181A1 ELECTRONIC CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2014-04-24
Information query
