Invention Grant
- Patent Title: Semiconductor device and voltage divider
- Patent Title (中): 半导体器件和分压器
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Application No.: US13564357Application Date: 2012-08-01
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Publication No.: US08928397B2Publication Date: 2015-01-06
- Inventor: Kazushi Kodera , Yoshiharu Kato
- Applicant: Kazushi Kodera , Yoshiharu Kato
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- Priority: JP2011-173233 20110808
- Main IPC: G05F1/10
- IPC: G05F1/10 ; G05F3/02
Abstract:
A semiconductor device includes first and second resistors. The first resistor is formed in a first substrate region and coupled between a first node and an output node. The second resistor is formed in a second substrate region and coupled between the output node and a second node. The first substrate region is coupled to the first node which has a first voltage. The second node has a second voltage. The second substrate region is coupled to a voltage dividing node that is set in the first resistor.
Public/Granted literature
- US20130038385A1 SEMICONDUCTOR DEVICE AND VOLTAGE DIVIDER Public/Granted day:2013-02-14
Information query
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