Invention Grant
- Patent Title: Electronic circuits including a MOSFET and a dual-gate JFET
- Patent Title (中): 包括MOSFET和双栅极JFET的电子电路
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Application No.: US13803792Application Date: 2013-03-14
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Publication No.: US08928410B2Publication Date: 2015-01-06
- Inventor: Alexandre G. Bracale , Denis A. Masliah
- Applicant: ACCO Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: ACCO Semiconductor, Inc.
- Current Assignee: ACCO Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Peters Verny, LLP
- Main IPC: H03F3/16
- IPC: H03F3/16 ; H01L27/088 ; H01L21/82 ; H01L27/06 ; H03F1/22 ; H03F3/195 ; H03F3/24 ; H03F1/02 ; H03F1/56 ; H03F3/193 ; H01L27/095 ; H01L27/098
Abstract:
Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
Public/Granted literature
- US20130248945A1 Electronic Circuits including a MOSFET and a Dual-Gate JFET Public/Granted day:2013-09-26
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