Invention Grant
- Patent Title: Compensating for process variation in integrated circuit fabrication
- Patent Title (中): 补偿集成电路制造中的工艺变化
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Application No.: US13766304Application Date: 2013-02-13
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Publication No.: US08928418B2Publication Date: 2015-01-06
- Inventor: Herschel A. Ainspan , Anthony R. Bonaccio , Ramana M. Malladi
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent David Cain
- Main IPC: H03B5/08
- IPC: H03B5/08 ; G05F3/02

Abstract:
Systems and methods for reducing process sensitivity in integrated circuit (“IC”) fabrication. An integrated circuit structure is provided that includes a first integrated circuit device having at least one parameter influenced by process variation in a first manner. The integrated circuit structure further includes a second integrated device having the least one parameter influenced by the process variation in a second manner. The first manner is opposite of the second manner. The second integrated device is configured to offset or reduce the influence of the process variation on the at least one parameter in the first integrated circuit device.
Public/Granted literature
- US20140225665A1 COMPENSATING FOR PROCESS VARIATION IN INTEGRATED CIRCUIT FABRICATION Public/Granted day:2014-08-14
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