Invention Grant
- Patent Title: Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus
- Patent Title (中): 表面声波谐振器,表面声波振荡器和电子设备
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Application No.: US13212714Application Date: 2011-08-18
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Publication No.: US08928432B2Publication Date: 2015-01-06
- Inventor: Takuya Owaki , Keigo Iizawa , Kunihito Yamanaka
- Applicant: Takuya Owaki , Keigo Iizawa , Kunihito Yamanaka
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2010-189862 20100826
- Main IPC: H03H9/25
- IPC: H03H9/25 ; H03H9/64 ; H03B5/32 ; H03H9/02 ; H03H9/05 ; H03H9/145

Abstract:
A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (−1°≦φ≦1°, 117°≦θ≦142°, 42.79°≦|ψ|≦49.57°), which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied: 0.01λ≦G (1), where λ represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy η of the IDT satisfy the following expression: - 2.5 × G λ + 0.675 ≦ η ≦ - 2.5 × G λ + 0.775 ( 5 ) and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression: 160≦N≦220 (19).
Public/Granted literature
- US20120049979A1 SURFACE ACOUSTIC WAVE RESONATOR, SURFACE ACOUSTIC WAVE OSCILLATOR, AND ELECTRONIC APPARATUS Public/Granted day:2012-03-01
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