Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13191940Application Date: 2011-07-27
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Publication No.: US08928466B2Publication Date: 2015-01-06
- Inventor: Koichiro Kamata
- Applicant: Koichiro Kamata
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-175416 20100804
- Main IPC: H04Q3/00
- IPC: H04Q3/00 ; G06K19/07

Abstract:
A protection circuit is designed to operate when the level of a DC power supply potential which is generated in a rectifier circuit is equal to or greater than a predetermined level (a reference level), so as to decrease the level of the generated DC power supply potential. On the other hand, the protection circuit is designed not to operate when the DC power supply potential which is generated in the rectifier circuit is equal to or less than the predetermined level (the reference level), so as to use the generated DC power supply potential without change. A transistor of the protection circuit includes an oxide semiconductor layer, which enables a reduction in the off-state current of the transistor and a reduction in power consumption of the protection circuit.
Public/Granted literature
- US20120032785A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-02-09
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