Invention Grant
US08928982B2 Wafer lens, laminated wafer lens, wafer lens cutting method and laminated wafer lens cutting method
有权
晶片透镜,层压晶片透镜,晶片透镜切割方法和层压晶片透镜切割方法
- Patent Title: Wafer lens, laminated wafer lens, wafer lens cutting method and laminated wafer lens cutting method
- Patent Title (中): 晶片透镜,层压晶片透镜,晶片透镜切割方法和层压晶片透镜切割方法
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Application No.: US13642654Application Date: 2011-04-20
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Publication No.: US08928982B2Publication Date: 2015-01-06
- Inventor: Tougo Teramoto , Akira Sato , Tohru Tominami
- Applicant: Tougo Teramoto , Akira Sato , Tohru Tominami
- Applicant Address: JP Tokyo
- Assignee: Konica Minolta Advanced Layers, Inc.
- Current Assignee: Konica Minolta Advanced Layers, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Cozen O'Connor
- Priority: JP2010-097653 20100421
- International Application: PCT/JP2011/059677 WO 20110420
- International Announcement: WO2011/132690 WO 20111027
- Main IPC: G02B27/10
- IPC: G02B27/10 ; G02B13/00 ; G02B3/00

Abstract:
A laminated wafer lens includes a wafer lens and a spacer substrate bonded to each other. The wafer lens includes a resin section provided on a surface of a glass substrate. The resin section includes lens portions and interval portions, each interval portion provided between adjacent lens portions. The spacer substrate has openings at positions corresponding to the respective lens portions. The lens portions are arrayed in row and column directions in a matrix fashion. The interval portions include first and second interval portions, the second interval portion longer than the first interval portion. The spacer substrate includes interval portions each of which is provided between adjacent openings. The interval portions include third and fourth interval portions corresponding to the first and second interval portions, respectively, the fourth interval portion being longer than the third interval portion.
Public/Granted literature
- US20130038952A1 Wafer Lens, Laminated Wafer Lens, Wafer Lens Cutting Method and Laminated Wafer Lens Cutting Method Public/Granted day:2013-02-14
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