Invention Grant
- Patent Title: Tunnel barrier sensor with multilayer structure
- Patent Title (中): 隧道屏障传感器具有多层结构
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Application No.: US12468467Application Date: 2009-05-19
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Publication No.: US08929035B2Publication Date: 2015-01-06
- Inventor: Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
- Applicant: Hideaki Fukuzawa , Hiromi Yuasa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPP2002-092998 20020328; JPP2002-263251 20020909
- Main IPC: G11B5/60
- IPC: G11B5/60 ; G11B5/33 ; G11B5/39 ; H01F10/193 ; B82Y40/00 ; G01R33/09 ; B82Y25/00 ; H01L43/08 ; H01F41/30 ; G11C11/16 ; H01L27/22 ; H01F10/32

Abstract:
A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located between the first and second magnetic layers, and a film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer.
Public/Granted literature
- US20090225477A1 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY Public/Granted day:2009-09-10
Information query
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