Invention Grant
- Patent Title: Methods of processing semiconductor substrates, electrostatic carriers for retaining substrates for processing, and assemblies comprising electrostatic carriers having substrates electrostatically bonded thereto
- Patent Title (中): 处理半导体衬底的方法，用于保持用于处理的衬底的静电载体，以及包括具有静电键合衬底的静电载体的组件
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Application No.: US13921022Application Date: 2013-06-18
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Publication No.: US08929052B2Publication Date: 2015-01-06
- Inventor: Dewali Ray , Warren M. Farnworth , Kyle K. Kirby
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/683
- IPC: H01L21/683
Abstract:
A method of processing a substrate includes physically contacting an exposed conductive electrode of an electrostatic carrier with a conductor to electrostatically bond a substrate to the electrostatic carrier. The conductor is removed from physically contacting the exposed conductive electrode. Dielectric material is applied over the conductive electrode. The substrate is treated while it is electrostatically bonded to the electrostatic carrier. In one embodiment, a conductor is forced through dielectric material that is received over a conductive electrode of an electrostatic carrier to physically contact the conductor with the conductive electrode to electrostatically bond a substrate to the electrostatic carrier. After removing the conductor from the dielectric material, the substrate is treated while it is electrostatically bonded to the electrostatic carrier. Electrostatic carriers for retaining substrates for processing, and such assemblies, are also disclosed.
Public/Granted literature
Information query
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