Invention Grant
- Patent Title: Resistive memory device and related method of operation
- Patent Title (中): 电阻式存储器及其相关操作方法
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Application No.: US13765990Application Date: 2013-02-13
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Publication No.: US08929124B2Publication Date: 2015-01-06
- Inventor: Dae Han Kim , Cheon An Lee
- Applicant: Samsung Semiconductor Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0025160 20120312
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C11/56 ; H01L27/24
Abstract:
A resistive memory device includes a resistive memory cell, and a read/program circuit configured to program the resistive memory cell from a first state to a second state. The read/program circuit reads a resistance in the first state of the resistive memory cell and adjusts a compliance current supplied to the resistive memory cell according to the read resistance during the program operation.
Public/Granted literature
- US20130235648A1 RESISTIVE MEMORY DEVICE AND RELATED METHOD OF OPERATION Public/Granted day:2013-09-12
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