Invention Grant
US08929134B2 Method of programming a flash memory by enhancing the channel voltage of a program-inhibit bit line with a boosted inhibit scheme
有权
通过用增强抑制方案增强禁止编程程序位线的通道电压来对闪存进行编程的方法
- Patent Title: Method of programming a flash memory by enhancing the channel voltage of a program-inhibit bit line with a boosted inhibit scheme
- Patent Title (中): 通过用增强抑制方案增强禁止编程程序位线的通道电压来对闪存进行编程的方法
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Application No.: US13762896Application Date: 2013-02-08
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Publication No.: US08929134B2Publication Date: 2015-01-06
- Inventor: Chu Yung Liu , Hsing Wen Chang , Yao Wen Chang , Tao Cheng Lu
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: G11C16/10
- IPC: G11C16/10
Abstract:
A method of programming a NAND flash memory cell string. The method includes a pre-boost stage configured to elevate channel voltage of a selected memory cell, and a boost stage is introduced after the pre-boost stage. The pre-boost stage has at least the following steps of biasing a bit line to a first voltage, biasing a string select transistor to a second voltage; and ramping down the string select transistor to the first voltage. In particular, the second voltage is higher than the first voltage.
Public/Granted literature
- US20140226411A1 METHOD OF PROGRAMMING FLASH MEMORY Public/Granted day:2014-08-14
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