Invention Grant
- Patent Title: Error recovery for flash memory
- Patent Title (中): 闪存出错恢复
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Application No.: US14172802Application Date: 2014-02-04
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Publication No.: US08929138B2Publication Date: 2015-01-06
- Inventor: Yingquan Wu , Marcus Marrow
- Applicant: SK hynix memory solutions inc.
- Applicant Address: US CA San Jose
- Assignee: SK hynix memory solutions inc.
- Current Assignee: SK hynix memory solutions inc.
- Current Assignee Address: US CA San Jose
- Agency: Van Pelt, Yi & James LLP
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G06F11/10

Abstract:
An indication of a page type which failed error correction decoding is received. A threshold to adjust is selected from a plurality of thresholds based at least in part on the page type. A third adjusted threshold associated with the page type is generated, including by: determining a first number of flipped bits using a first adjusted threshold associated with the page type, determining a second number of flipped bits using a second adjusted threshold associated with the page type, and generating the third adjusted threshold using the first number of flipped bits and the second number of flipped bits.
Public/Granted literature
- US20140173380A1 ERROR RECOVERY FOR FLASH MEMORY Public/Granted day:2014-06-19
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