Invention Grant
- Patent Title: Memory device, memory system, and power management method
- Patent Title (中): 存储器件,存储器系统和电源管理方法
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Application No.: US13773125Application Date: 2013-02-21
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Publication No.: US08929170B2Publication Date: 2015-01-06
- Inventor: Sang-Soo Park , Bong-Soon Lim , Hyuk-Jun Yoo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0049271 20120509
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C8/04 ; G11C8/06 ; G11C7/22

Abstract:
A power management method includes receiving a first command with first address indicating a first high power operation that is immediately executed in a first memory die, after receipt of the first command, receiving a second command with a second address indicating a second high power operation, such that an immediate execution of the second high power operation would overlap the first high power operation, and delaying execution of second high power operation through a first waiting period that ends upon completion of the first high power operation, while applying a reference voltage to a second word line of the second memory die indicated by the second address.
Public/Granted literature
- US20130301372A1 MEMORY DEVICE, MEMORY SYSTEM, AND POWER MANAGEMENT METHOD Public/Granted day:2013-11-14
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