Invention Grant
US08929416B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
有权
III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
- Patent Title: Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
- Patent Title (中): III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
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Application No.: US14012364Application Date: 2013-08-28
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Publication No.: US08929416B2Publication Date: 2015-01-06
- Inventor: Shimpei Takagi , Yusuke Yoshizumi , Koji Katayama , Masaki Ueno , Takatoshi Ikegami
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Venable LLP
- Agent Michael A. Sartori; Tamatane J. Aga
- Priority: JP2010-131404 20100608
- Main IPC: H01S5/32
- IPC: H01S5/32 ; H01S5/10 ; B82Y20/00 ; H01S5/02 ; H01S5/343 ; H01L33/00 ; H01L33/16 ; H01L33/32 ; H01S5/22 ; H01S5/34
Abstract:
A III-nitride semiconductor laser device including: a laser structure including a support base and a semiconductor region, the support base including a hexagonal III-nitride semiconductor and having a semipolar primary surface, and the semiconductor region being provided on the semipolar primary surface of the support base; and an electrode provided on the semiconductor region of the laser structure, the semiconductor region including a first cladding layer, a second cladding layer, and an active layer.
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