This disclosure provides for adjustment of memory IO timing using a voltage controlled oscillator (VCO) and a register that generates a VCO control voltage directly used to vary memory IO timing. The register may be externally programmable by a controller and may be located on a memory device (IC, module or other device) or on an external voltage generator, which then provides an adjustable voltage to the memory device. This structure may be used to adjust memory timing so as to achieve a minimum target bitrate and thus minimize frequency of operation to minimize power. In one embodiment, each of several memory devices may be independently adjusted in this way to achieve a mesochronous memory system; in another embodiment, memory devices may be have their timing adjusted in parallel, with all memory devices equal to or greater than a target bitrate. Teachings presented herein provide a way to relax overdesign requirements and “tune” fast-fast and slow-slow devices to effectively operate as typical devices.