Invention Grant
- Patent Title: Bit-replacement technique for DRAM error correction
- Patent Title (中): 用于DRAM纠错的位替换技术
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Application No.: US13505449Application Date: 2010-11-10
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Publication No.: US08930779B2Publication Date: 2015-01-06
- Inventor: Frederick A. Ware , Ely Tsern , Thomas Vogelsang
- Applicant: Frederick A. Ware , Ely Tsern , Thomas Vogelsang
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Peninsula Patent Group
- Agent Lance Kreisman
- International Application: PCT/US2010/056217 WO 20101110
- International Announcement: WO2011/062825 WO 20110526
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/50 ; G06F11/10 ; G11C11/401

Abstract:
The disclosed embodiments provide a dynamic memory device, comprising a set of dynamic memory cells and a set of replacement dynamic memory cells. The set of replacement dynamic memory cells includes data cells which contain replacement data bits for predetermined faulty cells in the set of dynamic memory cells, and address cells which contain address bits identifying the faulty cells, wherein each data cell is associated with a group of address cells that identify an associated faulty cell in the set of dynamic memory cells. The dynamic memory device also includes a remapping circuit, which remaps a faulty cell in the set of dynamic memory cells to an associated replacement cell in the set of replacement cells.
Public/Granted literature
- US20120221902A1 BIT-REPLACEMENT TECHNIQUE FOR DRAM ERROR CORRECTION Public/Granted day:2012-08-30
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