Invention Grant
US08932403B1 Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces 有权
制造具有纹理表面的低位错密度外延生长膜的方法

  • Patent Title: Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces
  • Patent Title (中): 制造具有纹理表面的低位错密度外延生长膜的方法
  • Application No.: US13113123
    Application Date: 2011-05-23
  • Publication No.: US08932403B1
    Publication Date: 2015-01-13
  • Inventor: Qiming LiGeorge T. Wang
  • Applicant: Qiming LiGeorge T. Wang
  • Applicant Address: US NM Albuquerque
  • Assignee: Sandia Corporation
  • Current Assignee: Sandia Corporation
  • Current Assignee Address: US NM Albuquerque
  • Agent Carol I. Ashby; Kevin W. Bieg
  • Main IPC: C30B21/02
  • IPC: C30B21/02
Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces
Abstract:
A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.
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