Invention Grant
- Patent Title: Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces
- Patent Title (中): 制造具有纹理表面的低位错密度外延生长膜的方法
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Application No.: US13113123Application Date: 2011-05-23
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Publication No.: US08932403B1Publication Date: 2015-01-13
- Inventor: Qiming Li , George T. Wang
- Applicant: Qiming Li , George T. Wang
- Applicant Address: US NM Albuquerque
- Assignee: Sandia Corporation
- Current Assignee: Sandia Corporation
- Current Assignee Address: US NM Albuquerque
- Agent Carol I. Ashby; Kevin W. Bieg
- Main IPC: C30B21/02
- IPC: C30B21/02

Abstract:
A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.
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