Invention Grant
US08932438B2 Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium 有权
制造磁阻元件的方法,溅射沉积室,用于制造具有溅射沉积室的磁阻元件的装置,程序和存储介质

Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium
Abstract:
The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.
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