Invention Grant
- Patent Title: Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium
- Patent Title (中): 制造磁阻元件的方法,溅射沉积室,用于制造具有溅射沉积室的磁阻元件的装置,程序和存储介质
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Application No.: US12972823Application Date: 2010-12-20
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Publication No.: US08932438B2Publication Date: 2015-01-13
- Inventor: Koji Tsunekawa , Hiroyuki Hosoya , Yoshinori Nagamine , Shinji Furukawa , Naoki Watanabe
- Applicant: Koji Tsunekawa , Hiroyuki Hosoya , Yoshinori Nagamine , Shinji Furukawa , Naoki Watanabe
- Applicant Address: JP Kanagawa-Ken
- Assignee: Canon Anelva Corporation
- Current Assignee: Canon Anelva Corporation
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2008-162385 20080620
- Main IPC: C23C14/34
- IPC: C23C14/34 ; G11B5/39 ; B82Y10/00 ; B82Y25/00 ; B82Y40/00 ; C23C14/14 ; C23C14/22 ; G01R33/09 ; H01F10/32 ; H01F41/18 ; H01F41/30 ; H01L43/12 ; G11B5/31

Abstract:
The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.
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