Invention Grant
- Patent Title: Porous metal etching
- Patent Title (中): 多孔金属蚀刻
-
Application No.: US13762117Application Date: 2013-02-07
-
Publication No.: US08932476B2Publication Date: 2015-01-13
- Inventor: Thomas Kunstmann , Stefan Willkofer , Anja Gissibl , Johann Strasser , Matthias Mueller , Eva-Maria Hess
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C23F1/02 ; C23F1/08
Abstract:
Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.
Public/Granted literature
- US20140217062A1 Porous Metal Etching Public/Granted day:2014-08-07
Information query
