Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13081675Application Date: 2011-04-07
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Publication No.: US08932882B2Publication Date: 2015-01-13
- Inventor: Katsushi Takano , Hiroaki Izumi , Kanji Sugino
- Applicant: Katsushi Takano , Hiroaki Izumi , Kanji Sugino
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.a.r.l.
- Current Assignee: PS4 Luxco S.a.r.l.
- Current Assignee Address: LU Luxembourg
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-089891 20100408
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G05B19/12

Abstract:
A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first group identifier allocated to a first group of semiconductor wafers is detected. The first group of semiconductor wafers includes a first semiconductor wafer to be processed first among the first group. A first processor of a plurality of processors, which process respective ones of the first group of semiconductor wafers, are determined based on the first group identifier. The first processor is used for processing the first semiconductor wafer. The first semiconductor wafer is supplied to the first processor.
Public/Granted literature
- US20110250707A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-10-13
Information query
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