Invention Grant
- Patent Title: Vertical-structure semiconductor light emitting element and a production method therefor
- Patent Title (中): 垂直结构半导体发光元件及其制造方法
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Application No.: US13505618Application Date: 2010-11-23
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Publication No.: US08932890B2Publication Date: 2015-01-13
- Inventor: Tae Yeon Seong
- Applicant: Tae Yeon Seong
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Ked & Associates, LLP
- Priority: KR10-2009-0114801 20091125
- International Application: PCT/KR2010/008281 WO 20101123
- International Announcement: WO2011/065723 WO 20110603
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/64 ; H01L33/00
Abstract:
The present invention relates to a vertical-structure semiconductor light emitting device and a production method thereof, more specifically, to a vertical-structure semiconductor light emitting device having a high-performance heat sink support comprising a thick metal film or metal foil. The vertical-structure semiconductor light emitting element produced in accordance with the present invention constitutes a highly reliable light emitting element with absolutely no thermal or mechanical damage since it has the high performance heatsink support and so suffers not fine micro-cracking and can be freely subjected to heat treatment and to post-processing including of a side-surface passivation thin film.
Public/Granted literature
- US20120220063A1 VERTICAL-STRUCTURE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR Public/Granted day:2012-08-30
Information query
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