Invention Grant
US08932892B2 Epitaxiay wafer, method for manufacturing the same and method for manufacturing LED chip
有权
Epitaxiay晶圆，其制造方法和制造LED芯片的方法
- Patent Title: Epitaxiay wafer, method for manufacturing the same and method for manufacturing LED chip
- Patent Title (中): Epitaxiay晶圆，其制造方法和制造LED芯片的方法
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Application No.: US13536745Application Date: 2012-06-28
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Publication No.: US08932892B2Publication Date: 2015-01-13
- Inventor: Wang Zhang , Xilin Su , Chunlin Xie , Hongpo Hu
- Applicant: Wang Zhang , Xilin Su , Chunlin Xie , Hongpo Hu
- Applicant Address: CN Shenzhen, Guangdong CN Shenzhen, Guangdong
- Assignee: Shenzhen BYD Auto R&D Company Limited,BYD Company Limited
- Current Assignee: Shenzhen BYD Auto R&D Company Limited,BYD Company Limited
- Current Assignee Address: CN Shenzhen, Guangdong CN Shenzhen, Guangdong
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: CN200910258858 20091229
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00 ; H01L21/02 ; H01L33/12 ; H01L33/32
Abstract:
A method for manufacturing an epitaxial wafer for a light emitting diode (LED) is provided. The method may comprise: forming a back coating layer on a back surface of a substrate; forming a buffer layer on a top surface of the substrate; forming an N-type semiconductor layer on the buffer layer; forming a multi-quantum well layer on the N-type semiconductor layer; and forming a P-type semiconductor layer on the multi-quantum well layer. An epitaxial wafer and a method for manufacturing an LED chip are also provided.
Public/Granted literature
- US20120267607A1 EPITAXIAY WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING LED CHIP Public/Granted day:2012-10-25
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