Invention Grant
US08932897B2 Phase change memory cell 有权
相变存储单元

Phase change memory cell
Abstract:
A phase change memory cell includes a first contact, a phase change region above and in contact with the first contact, an electrode region, and a second contact above and in contact with the electrode region. The phase change region surrounds the electrode region. The electrode region has a first surface in contact with the phase change region and a second surface in contact with the second contact, and the second surface is wider than the first surface.
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