Invention Grant
- Patent Title: Phase change memory cell
- Patent Title (中): 相变存储单元
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Application No.: US14185269Application Date: 2014-02-20
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Publication No.: US08932897B2Publication Date: 2015-01-13
- Inventor: Ming-Huei Shen , Tsun Kai Tsao , Shih-Chang Liu , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L45/00 ; H01L27/24

Abstract:
A phase change memory cell includes a first contact, a phase change region above and in contact with the first contact, an electrode region, and a second contact above and in contact with the electrode region. The phase change region surrounds the electrode region. The electrode region has a first surface in contact with the phase change region and a second surface in contact with the second contact, and the second surface is wider than the first surface.
Public/Granted literature
- US20140166970A1 PHASE CHANGE MEMORY CELL Public/Granted day:2014-06-19
Information query
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