Phase change memory and method of fabricating same

Invention Grant

US08932900B2 Phase change memory and method of fabricating same 有权

Title translation: 相变存储器及其制造方法

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Patent Title: Phase change memory and method of fabricating same
Patent Title (中): 相变存储器及其制造方法
Application No.: US13216369

Application Date: 2011-08-24
Publication No.: US08932900B2

Publication Date: 2015-01-13
Inventor: Tsun-Kai Tsao , Ming-Huei Shen , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
Applicant: Tsun-Kai Tsao , Ming-Huei Shen , Shih-Chang Liu , Yeur-Luen Tu , Chia-Shiung Tsai
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Haynes and Boone, LLP
Main IPC: H01L21/8239
IPC: H01L21/8239 ; H01L45/00

Phase change memory and method of fabricating same

Abstract:

A fine pitch phase change random access memory (“PCRAM”) design and method of fabricating same are disclosed. One embodiment is a phase change memory (“PCM”) cell comprising a spacer defining a rectangular reaction area and a phase change material layer disposed within the reaction area. The PCM cell further comprises a protection layer disposed over the GST film layer and within the area defined by the spacer; and a capping layer disposed over the protection layer and the spacer.

Abstract(Chinese):

公开了一种细间距相变随机存取存储器（“PCRAM”）设计及其制造方法。一个实施例是相变存储器（“PCM”）单元，其包括限定矩形反应区域的间隔区和设置在反应区域内的相变材料层。 PCM单元进一步包括设置在GST膜层之上并在由间隔物限定的区域内的保护层; 以及设置在所述保护层和间隔物上方的覆盖层。

Public/Granted literature

US20130048936A1 PHASE CHANGE MEMORY AND METHOD OF FABRICATING SAME Public/Granted day:2013-02-28

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构