Invention Grant
- Patent Title: Thin film transistor substrate having metal oxide semiconductor and method for manufacturing the same
- Patent Title (中): 具有金属氧化物半导体的薄膜晶体管基板及其制造方法
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Application No.: US13717564Application Date: 2012-12-17
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Publication No.: US08932902B2Publication Date: 2015-01-13
- Inventor: Kisul Cho , Seongmoh Seo
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Fenwick & West LLP
- Priority: KR10-2012-0068440 20120626
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/786 ; H01L29/66 ; H01L27/12
Abstract:
The present disclosure relates to a thin film transistor substrate with a metal oxide semiconductor layer that has enhanced characteristics and stability. The present disclosure also relates to a method for manufacturing a thin film transistor substrate in which a thermal treatment is conducted for the metal oxide semiconductor layer and the damages to the substrate by the thermal treatment are minimized.
Public/Granted literature
- US20130341624A1 Thin Film Transistor Substrate Having Metal Oxide Semiconductor and Method for Manufacturing the Same Public/Granted day:2013-12-26
Information query
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