Invention Grant
- Patent Title: Through silicon via bonding structure
- Patent Title (中): 通过硅通过结合结构
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Application No.: US12193950Application Date: 2008-08-19
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Publication No.: US08932906B2Publication Date: 2015-01-13
- Inventor: Dean Wang , Chen-Shien Chen , Kai-Ming Ching , Bo-I Lee , Chien-Hsiun Lee
- Applicant: Dean Wang , Chen-Shien Chen , Kai-Ming Ching , Bo-I Lee , Chien-Hsiun Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/00 ; H01L23/48 ; H01L21/18

Abstract:
System and method for bonding semiconductor substrates is presented. A preferred embodiment comprises forming a buffer layer over a surface of a semiconductor substrate while retaining TSVs that protrude from the buffer layer in order to prevent potential voids that might form. A protective layer is formed on another semiconductor substrate that will be bonded to the first semiconductor substrate. The two substrates are aligned and bonded together, with the buffer layer preventing any short circuit contacts to the surface of the original semiconductor substrate.
Public/Granted literature
- US20100047963A1 Through Silicon Via Bonding Structure Public/Granted day:2010-02-25
Information query
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