Invention Grant
- Patent Title: Vertical stacking of graphene in a field-effect transistor
- Patent Title (中): 在场效应晶体管中垂直堆叠石墨烯
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Application No.: US13683148Application Date: 2012-11-21
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Publication No.: US08932919B2Publication Date: 2015-01-13
- Inventor: Damon B. Farmer , Aaron D. Franklin , Sataoshi Oida , Joshua T. Smith
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/336
Abstract:
A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet.
Public/Granted literature
- US20140138624A1 VERTICAL STACKING OF GRAPHENE IN A FIELD-EFFECT TRANSISTOR Public/Granted day:2014-05-22
Information query
IPC分类:
