Trench-based power semiconductor devices with increased breakdown voltage characteristics

Invention Grant

US08932924B2 Trench-based power semiconductor devices with increased breakdown voltage characteristics 有权

Title translation: 基于沟槽的功率半导体器件具有增加的击穿电压特性

Patent Title: Trench-based power semiconductor devices with increased breakdown voltage characteristics
Patent Title (中): 基于沟槽的功率半导体器件具有增加的击穿电压特性
Application No.: US14058956

Application Date: 2013-10-21
Publication No.: US08932924B2

Publication Date: 2015-01-13
Inventor: Joseph A. Yedinak , Dean E. Probst , Daniel Calafut
Applicant: Fairchild Semiconductor Corporation
Applicant Address: US ME South Portland
Assignee: Fairchild Semiconductor Corporation
Current Assignee: Fairchild Semiconductor Corporation
Current Assignee Address: US ME South Portland
Main IPC: H01L21/336
IPC: H01L21/336 ; H01L29/872 ; H01L29/78 ; H01L29/40 ; H01L29/10 ; H01L29/423 ; H01L29/417 ; H01L29/06

Abstract:

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

Abstract(Chinese):

公开了具有提供增加的击穿电压和其它益处的特征的功率半导体器件。

Public/Granted literature

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的