Invention Grant
- Patent Title: Silicon carbide semiconductor device manufacturing method
- Patent Title (中): 碳化硅半导体器件制造方法
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Application No.: US13950044Application Date: 2013-07-24
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Publication No.: US08932944B2Publication Date: 2015-01-13
- Inventor: Yoichiro Tarui , Naoto Kaguchi , Takuyo Nakamura
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-263199 20101126; JP2011-161585 20110725
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/00 ; H01L29/16 ; H01L21/04 ; H01L29/06 ; H01L29/10 ; H01L29/66 ; H01L29/78
Abstract:
In the manufacture of a silicon carbide semiconductor device having a termination region being a JTE region or FLR, the margin of the amount of etching for removing a damage layer formed in the surface of the termination region is enlarged. A silicon carbide semiconductor device has a termination region being a JTE (Junction Termination Extension) region or an FLR (Field Limiting Ring) at a termination of the semiconductor elements. The termination region is formed by one step of ion implantation in which the kind of impurity and the implant energy are fixed. In the impurity concentration profile of the termination region in the depth direction, the concentration peak in the shallowest position is in a position deeper than 0.35 μm from the surface, and the concentration in the surface portion is not more than one-tenth of the shallowest concentration peak.
Public/Granted literature
- US20130309851A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR Public/Granted day:2013-11-21
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