Invention Grant
- Patent Title: Method of cutting a substrate and method of manufacturing a semiconductor device
- Patent Title (中): 切割基板的方法和制造半导体器件的方法
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Application No.: US12900754Application Date: 2010-10-08
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Publication No.: US08933369B2Publication Date: 2015-01-13
- Inventor: Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Toshimitsu Wakuda
- Applicant: Fumitsugu Fukuyo , Kenshi Fukumitsu , Naoki Uchiyama , Toshimitsu Wakuda
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP2000-278306 20000913
- Main IPC: B23K26/00
- IPC: B23K26/00 ; C03C23/00 ; B23K26/03 ; B23K26/04 ; B23K26/06 ; B23K26/073 ; B23K26/08 ; B23K26/36 ; B23K26/40 ; B28D5/00 ; C03B33/023 ; C03B33/08 ; C03B33/10 ; G02F1/1368

Abstract:
A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.
Public/Granted literature
- US20110027972A1 METHOD OF CUTTING A SUBSTRATE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2011-02-03
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