Invention Grant
US08933414B2 Focused ion beam low kV enhancement 有权
聚焦离子束低kV增强

Focused ion beam low kV enhancement
Abstract:
The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.
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