Invention Grant
- Patent Title: Focused ion beam low kV enhancement
- Patent Title (中): 聚焦离子束低kV增强
-
Application No.: US13779142Application Date: 2013-02-27
-
Publication No.: US08933414B2Publication Date: 2015-01-13
- Inventor: Mostafa Maazouz
- Applicant: FEI Company
- Applicant Address: US OR Hillsboro
- Assignee: FEI Company
- Current Assignee: FEI Company
- Current Assignee Address: US OR Hillsboro
- Agency: Scheinberg & Associates, PC
- Agent Ki O; John E. Hillert
- Main IPC: H01J37/05
- IPC: H01J37/05 ; H01J49/10 ; H01J49/26 ; G01R31/305 ; H01J37/04 ; H01J3/02

Abstract:
The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.
Public/Granted literature
- US20140239175A1 Focused Ion Beam Low kV Enhancement Public/Granted day:2014-08-28
Information query