Invention Grant
US08933437B2 Organic semiconductor material with neutral radical compound of a trioxotriangulene derivative as a semiconductor material
有权
具有作为半导体材料的三氧三三烯衍生物的中性自由基化合物的有机半导体器件
- Patent Title: Organic semiconductor material with neutral radical compound of a trioxotriangulene derivative as a semiconductor material
- Patent Title (中): 具有作为半导体材料的三氧三三烯衍生物的中性自由基化合物的有机半导体器件
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Application No.: US13131003Application Date: 2009-11-25
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Publication No.: US08933437B2Publication Date: 2015-01-13
- Inventor: Yasushi Morita , Masaaki Yokoyama , Shozo Yanagida , Yoshihisa Tawada , Kenji Yamamoto , Ryotaro Tsuji
- Applicant: Yasushi Morita , Masaaki Yokoyama , Shozo Yanagida , Yoshihisa Tawada , Kenji Yamamoto , Ryotaro Tsuji
- Applicant Address: JP Osaka-shi
- Assignee: Kaneka Corporation
- Current Assignee: Kaneka Corporation
- Current Assignee Address: JP Osaka-shi
- Agency: Alleman Hall McCoy Russell & Tuttle LLP
- Priority: JP2008-302912 20081127
- International Application: PCT/JP2009/006360 WO 20091125
- International Announcement: WO2010/061595 WO 20100603
- Main IPC: H01L51/30
- IPC: H01L51/30 ; H01L51/00 ; H01L51/42 ; H01L51/50

Abstract:
An organic semiconductor device according to the present invention includes a semiconductor layer 14 interposed between two electrodes 12 and 15, and the semiconductor layer 14 contains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layer 14 acts as an n-type semiconductor and coacts with a p-type semiconductor layer 13 to exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.
Public/Granted literature
- US20120126206A1 ORGANIC SEMICONDUCTOR DEVICE Public/Granted day:2012-05-24
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