Invention Grant
US08933437B2 Organic semiconductor material with neutral radical compound of a trioxotriangulene derivative as a semiconductor material 有权
具有作为半导体材料的三氧三三烯衍生物的中性自由基化合物的有机半导体器件

Organic semiconductor material with neutral radical compound of a trioxotriangulene derivative as a semiconductor material
Abstract:
An organic semiconductor device according to the present invention includes a semiconductor layer 14 interposed between two electrodes 12 and 15, and the semiconductor layer 14 contains a trioxotriangulene (TOT) derivative, which is a neutral radical compound, as a semiconductor material. The semiconductor layer 14 acts as an n-type semiconductor and coacts with a p-type semiconductor layer 13 to exhibit a photoelectric conversion effect. The organic semiconductor device is characterized as including a semiconductor layer that has a narrow band gap, has light absorption performance in an infrared region, and is high in carrier mobility.
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