Invention Grant
US08933461B2 III-nitride enhancement mode transistors with tunable and high gate-source voltage rating
有权
具有可调谐和高栅极 - 源极电压额定值的III族氮化物增强型晶体管
- Patent Title: III-nitride enhancement mode transistors with tunable and high gate-source voltage rating
- Patent Title (中): 具有可调谐和高栅极 - 源极电压额定值的III族氮化物增强型晶体管
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Application No.: US13886410Application Date: 2013-05-03
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Publication No.: US08933461B2Publication Date: 2015-01-13
- Inventor: Sameer Pendharkar , Naveen Tipirneni
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frederick J. Telecky, Jr.
- Main IPC: H01L31/0256
- IPC: H01L31/0256 ; H01L21/336 ; H01L29/20 ; H01L29/66 ; H01L29/778 ; H01L21/8252 ; H01L21/8258 ; H01L27/06 ; H01L29/423 ; H01L29/10
Abstract:
A semiconductor device includes an enhancement mode GaN FET with a depletion mode GaN FET electrically coupled in series between a gate node of the enhancement mode GaN FET and a gate terminal of the semiconductor device. A gate node of the depletion mode GaN FET is electrically coupled to a source node of the enhancement mode GaN FET. A source node of said enhancement mode GaN FET is electrically coupled to a source terminal of the semiconductor device, a drain node of the enhancement mode GaN FET is electrically coupled to a drain terminal of said semiconductor device, and a drain node of the depletion mode GaN FET is electrically coupled to a gate terminal of the semiconductor device.
Public/Granted literature
- US20140042452A1 III-NITRIDE ENHANCEMENT MODE TRANSISTORS WITH TUNABLE AND HIGH GATE-SOURCE VOLTAGE RATING Public/Granted day:2014-02-13
Information query
IPC分类:
