Invention Grant
- Patent Title: Compound semiconductor device and method of manufacturing the same
- Patent Title (中): 化合物半导体器件及其制造方法
-
Application No.: US13549660Application Date: 2012-07-16
-
Publication No.: US08933485B2Publication Date: 2015-01-13
- Inventor: Atsushi Yamada
- Applicant: Atsushi Yamada
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2011-203582 20110916
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L21/02 ; H01L29/20
Abstract:
An embodiment of a compound semiconductor device includes: a Si substrate; a Si oxide layer formed over a surface of the Si substrate; a nucleation layer formed over the Si oxide layer, the nucleation layer exposing a part of the Si oxide layer; and a compound semiconductor stacked structure formed over the Si oxide layer and the nucleation layer.
Public/Granted literature
- US20130069113A1 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-03-21
Information query
IPC分类:
