Invention Grant
US08933487B2 Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale mask
有权
通过灰度掩模使用离子注入控制III型氮化物器件中的横向二维电子空穴气体HEMT
- Patent Title: Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale mask
- Patent Title (中): 通过灰度掩模使用离子注入控制III型氮化物器件中的横向二维电子空穴气体HEMT
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Application No.: US14063207Application Date: 2013-10-25
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Publication No.: US08933487B2Publication Date: 2015-01-13
- Inventor: Sameh G. Khalil , Karim S. Boutros
- Applicant: HRL Laboratories, LLC
- Applicant Address: US CA Malibu
- Assignee: HRL Laboratories,LLC
- Current Assignee: HRL Laboratories,LLC
- Current Assignee Address: US CA Malibu
- Agency: Ladas & Parry
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/34 ; H01L29/778 ; H01L21/265 ; H01L29/423 ; H01L29/20
Abstract:
A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.
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