Invention Grant
- Patent Title: Compound semiconductor device and manufacturing method of the same
- Patent Title (中): 复合半导体器件及其制造方法
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Application No.: US13787788Application Date: 2013-03-06
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Publication No.: US08933489B2Publication Date: 2015-01-13
- Inventor: Toshihide Kikkawa
- Applicant: Transphorm Japan, Inc.
- Applicant Address: JP Yokohama
- Assignee: Transphorm Japan, Inc.
- Current Assignee: Transphorm Japan, Inc.
- Current Assignee Address: JP Yokohama
- Agency: Fish & Richardson P.C.
- Priority: JP2012-077624 20120329
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/02 ; H02M3/335 ; H01L29/66 ; H01L21/8252 ; H01L29/10 ; H01L29/20 ; H01L29/207
Abstract:
An AlGaN/GaN.HEMT includes, a compound semiconductor lamination structure; a p-type semiconductor layer formed on the compound semiconductor lamination structure; and a gate electrode formed on the p-type semiconductor layer, in which Mg being an inert element of p-GaN is introduced into both sides of the gate electrode at the p-type semiconductor layer, and introduced portions of Mg are inactivated.
Public/Granted literature
- US20130258719A1 COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2013-10-03
Information query
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