Invention Grant
US08933515B2 Device structure, layout and fabrication method for uniaxially strained transistors
有权
单轴应变晶体管的器件结构，布局和制造方法
- Patent Title: Device structure, layout and fabrication method for uniaxially strained transistors
- Patent Title (中): 单轴应变晶体管的器件结构，布局和制造方法
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Application No.: US13531175Application Date: 2012-06-22
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Publication No.: US08933515B2Publication Date: 2015-01-13
- Inventor: Stephen W. Bedell , Huiming Bu , Kangguo Cheng , Bruce B. Doris , Johnathan E. Faltermeier , Ali Khakifirooz , Devendra K. Sadana , Chun-Chen Yeh
- Applicant: Stephen W. Bedell , Huiming Bu , Kangguo Cheng , Bruce B. Doris , Johnathan E. Faltermeier , Ali Khakifirooz , Devendra K. Sadana , Chun-Chen Yeh
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8238 ; H01L27/02 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device and method for fabricating a semiconductor device include providing a strained semiconductor layer having a first strained axis, forming an active region within a surface of the strained semiconductor layer where the active region has a longitudinal axis along the strained axis and forming gate structures over the active region. Raised source/drain regions are formed on the active regions above and over the surface of the strained semiconductor layer and adjacent to the gate structures to form transistor devices.
Public/Granted literature
- US20120261762A1 DEVICE STRUCTURE, LAYOUT AND FABRICATION METHOD FOR UNIAXIALLY STRAINED TRANSISTORS Public/Granted day:2012-10-18
Information query
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