Invention Grant
- Patent Title: Single-chip referenced full-bridge magnetic field sensor
- Patent Title (中): 单芯片参考全桥磁场传感器
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Application No.: US14112928Application Date: 2012-04-06
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Publication No.: US08933523B2Publication Date: 2015-01-13
- Inventor: James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei
- Applicant: James G. Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei
- Agent Yuqin Jin
- Priority: CN201110100226 20110421
- International Application: PCT/CN2012/073604 WO 20120406
- International Announcement: WO2012/142915 WO 20121026
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; G01R33/09

Abstract:
The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.
Public/Granted literature
- US20140054733A1 SINGLE-CHIP REFERENCED FULL-BRIDGE MAGNETIC FIELD SENSOR Public/Granted day:2014-02-27
Information query
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