Invention Grant
- Patent Title: Schottky diode with buried layer in GaN materials
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Application No.: US13270641Application Date: 2011-10-11
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Publication No.: US08933532B2Publication Date: 2015-01-13
- Inventor: Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , David P. Bour , Linda Romano , Thomas R. Prunty
- Applicant: Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , David P. Bour , Linda Romano , Thomas R. Prunty
- Applicant Address: US CA San Jose
- Assignee: Avogy, Inc.
- Current Assignee: Avogy, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/872
- IPC: H01L29/872 ; H01L29/808 ; H01L29/66 ; H01L29/20 ; H01L29/868 ; H01L29/40 ; H01L29/06
Abstract:
A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.
Public/Granted literature
- US20130087879A1 SCHOTTKY DIODE WITH BURIED LAYER IN GAN MATERIALS Public/Granted day:2013-04-11
Information query
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