Invention Grant
- Patent Title: Isolation structure of high-voltage driving circuit
- Patent Title (中): 高压驱动电路的隔离结构
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Application No.: US14240287Application Date: 2012-08-14
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Publication No.: US08933534B2Publication Date: 2015-01-13
- Inventor: Longxing Shi , Qinsong Qian , Weifeng Sun , Jing Zhu , Xianguo Huang , Shengli Lu
- Applicant: Longxing Shi , Qinsong Qian , Weifeng Sun , Jing Zhu , Xianguo Huang , Shengli Lu
- Applicant Address: CN
- Assignee: Southeast University
- Current Assignee: Southeast University
- Current Assignee Address: CN
- Agency: Hayes Soloway P.C.
- Priority: CN201110242932 20110823
- International Application: PCT/CN2012/080087 WO 20120814
- International Announcement: WO2013/026363 WO 20130228
- Main IPC: H01L21/761
- IPC: H01L21/761 ; H01L29/36 ; H01L29/06 ; H01L21/265 ; H01L29/78 ; H01L21/8234 ; H01L29/08 ; H01L29/10
Abstract:
An isolation structure of a high-voltage driving circuit includes a P-type substrate and a P-type epitaxial layer; a high voltage area, a low voltage area and a high and low voltage junction terminal area are arranged on the P-type epitaxial layer; a first P-type junction isolation area is arranged between the high and low voltage junction terminal area and the low voltage area, and a high-voltage insulated gate field effect tube is arranged between the high voltage area and the low voltage area; two sides of the high-voltage insulated gate field effect tube and an isolation structure between the high-voltage insulated gate field effect tube and a high side area are formed as a second P-type junction isolation area.
Public/Granted literature
- US20140203406A1 ISOLATION STRUCTURE OF HIGH-VOLTAGE DRIVING CIRCUIT Public/Granted day:2014-07-24
Information query
IPC分类:
