Invention Grant
- Patent Title: Oxygen-doped gallium nitride single crystal substrate
- Patent Title (中): 氧掺杂氮化镓单晶衬底
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Application No.: US14147272Application Date: 2014-01-03
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Publication No.: US08933538B2Publication Date: 2015-01-13
- Inventor: Kensaku Motoki , Masaki Ueno
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2001/113872 20010412
- Main IPC: H01L29/207
- IPC: H01L29/207 ; C23C16/30 ; C30B23/00 ; C30B23/02 ; C30B25/00 ; C30B25/02 ; C30B29/40 ; C30B33/00 ; H01L21/02 ; H01L29/20
Abstract:
Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Oxygen-doped {20-21}, {1-101}, {1-100}, {11-20} or {20-22} surface n-type gallium nitride crystals are obtained.
Public/Granted literature
- US20140117377A1 OXYGEN-DOPED GALLIUM NITRIDE SINGLE CRYSTAL SUBSTRATE Public/Granted day:2014-05-01
Information query
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