Invention Grant
US08933543B2 Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and Ag
有权
具有m面成角度半导体区域的氮化物半导体元件和包含Mg和Ag的电极
- Patent Title: Nitride semiconductor element having m-plane angled semiconductor region and electrode including Mg and Ag
- Patent Title (中): 具有m面成角度半导体区域的氮化物半导体元件和包含Mg和Ag的电极
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Application No.: US13503972Application Date: 2011-03-15
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Publication No.: US08933543B2Publication Date: 2015-01-13
- Inventor: Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Akihiro Isozaki
- Applicant: Toshiya Yokogawa , Mitsuaki Oya , Atsushi Yamada , Akihiro Isozaki
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Renner, Otto, Boisselle & Sklar, LLP
- Priority: JP2010-085982 20100402
- International Application: PCT/JP2011/001517 WO 20110315
- International Announcement: WO2011/125290 WO 20111013
- Main IPC: H01L33/16
- IPC: H01L33/16 ; H01L21/02 ; H01L33/40 ; H01L23/532 ; H01L33/00 ; H01L33/32 ; H01S5/042 ; H01S5/32 ; H01S5/323
Abstract:
A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x≧0, y≧0, and z≧0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
Public/Granted literature
- US20120211725A1 NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR Public/Granted day:2012-08-23
Information query
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