Invention Grant
- Patent Title: Semiconductor unit
- Patent Title (中): 半导体单元
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Application No.: US13934858Application Date: 2013-07-03
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Publication No.: US08933553B2Publication Date: 2015-01-13
- Inventor: Shinsuke Nishi , Shogo Mori , Yuri Otobe , Naoki Kato
- Applicant: Kabushiki Kaisha Toyota Jidoshokki
- Applicant Address: JP Aichi-ken
- Assignee: Kabushiki Kaisha Toyota Jidoshokki
- Current Assignee: Kabushiki Kaisha Toyota Jidoshokki
- Current Assignee Address: JP Aichi-ken
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-152579 20120706
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/373 ; H01L23/467 ; H01L23/00 ; H01L25/07 ; H05K7/14 ; H01L23/64 ; H01L23/31

Abstract:
A semiconductor unit includes a first conductive layer, a second conductive layer electrically insulated from the first conductive layer, a first semiconductor device mounted on the first conductive layer, a second semiconductor device mounted on the second conductive layer, a first bus bar for electrical connection of the second semiconductor device to the first conductive layer, and a second bus bar for electrical connection of the first semiconductor device to one of the positive and negative terminals of a battery. The first bus bar is disposed in overlapping relation to the second bus bar in such a manner that mold resin fills between the first bus bar and the second bus bar.
Public/Granted literature
- US20140008781A1 SEMICONDUCTOR UNIT Public/Granted day:2014-01-09
Information query
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