Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13628329Application Date: 2012-09-27
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Publication No.: US08933560B2Publication Date: 2015-01-13
- Inventor: Takumi Ihara , Masami Mouri
- Applicant: Fujitsu Semiconductor Limited
- Applicant Address: JP Yokohama-shi, Kanagawa
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama-shi, Kanagawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2010-113498 20100517
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/367 ; H01L23/055 ; H01L23/42 ; H01L23/433 ; H01L23/00

Abstract:
A semiconductor device includes a substrate, a semiconductor element disposed on the substrate, a heat radiating plate disposed on the substrate and covering the semiconductor element, and a connection member connecting an upper surface of the semiconductor element and a lower surface of the heat radiating plate, wherein the connection member includes a first member being in contact with the upper surface of the semiconductor element and having a first melting point, a second member being in contact with the first member, having a larger area than the first member, and having a second melting point higher than the first melting point, and a third member interposed between the second member and the heat radiating plate, having an area smaller than the second member, and having a third melting point lower than the second melting point.
Public/Granted literature
- US20130020696A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-01-24
Information query
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