Invention Grant
- Patent Title: Three-dimension circuit structure and semiconductor device
- Patent Title (中): 三维电路结构及半导体器件
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Application No.: US13572711Application Date: 2012-08-13
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Publication No.: US08933563B2Publication Date: 2015-01-13
- Inventor: Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
- Applicant: Wei-Chou Lan , Ted-Hong Shinn , Henry Wang , Chia-Chun Yeh
- Applicant Address: TW Hsinchu
- Assignee: E Ink Holdings Inc.
- Current Assignee: E Ink Holdings Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100146892A 20111216
- Main IPC: H01L29/43
- IPC: H01L29/43 ; H01L23/485 ; H01L23/532

Abstract:
A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.
Public/Granted literature
- US20130154015A1 THREE-DIMENSION CIRCUIT STRUCTURE AND SEMICONDUCTOR DEVICE Public/Granted day:2013-06-20
Information query
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