Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12907468Application Date: 2010-10-19
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Publication No.: US08933568B2Publication Date: 2015-01-13
- Inventor: Tsuyoshi Takayama , Yukio Yasuda , Hajime Kato , Kazuaki Hiyama , Taishi Sasaki , Mikio Ishihara
- Applicant: Tsuyoshi Takayama , Yukio Yasuda , Hajime Kato , Kazuaki Hiyama , Taishi Sasaki , Mikio Ishihara
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-055383 20100312
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.
Public/Granted literature
- US20110221076A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-09-15
Information query
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