Invention Grant
US08933714B2 Level shift circuit using parasitic resistor in semiconductor substrate
有权
在半导体衬底中使用寄生电阻的电平移位电路
- Patent Title: Level shift circuit using parasitic resistor in semiconductor substrate
- Patent Title (中): 在半导体衬底中使用寄生电阻的电平移位电路
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Application No.: US13861488Application Date: 2013-04-12
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Publication No.: US08933714B2Publication Date: 2015-01-13
- Inventor: Masashi Akahane
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2012-090994 20120412
- Main IPC: G01R27/28
- IPC: G01R27/28 ; G11C19/00 ; H03K17/56 ; G01R27/02 ; H03K17/0412 ; H03K17/14 ; H03K17/16

Abstract:
A level shift circuit in which no adverse effect is produced on a delay time, regardless of the resistance values of resistors. The level shift circuit includes an operation detection circuit that outputs a nseten signal and a nresen signal in response to a state of output from first and second series circuits, a latch malfunction protection circuit connected to the operation detection circuit, a latch circuit connected through first to sixth resistors to first and second level shift output terminals of the first and second series circuits, first and second parasitic resistors, and third and fourth switching elements connected in parallel therewith, and fifth and sixth switching elements connected to a power source potential, a connection point of the first and second resistors or a connection point of the third and fourth resistors, and the operation detection circuit.
Public/Granted literature
- US20130293247A1 LEVEL SHIFT CIRCUIT USING PARASITIC RESISTOR IN SEMICONDUCTOR SUBSTRATE Public/Granted day:2013-11-07
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