Invention Grant
US08934084B2 System and method for printing interference patterns having a pitch in a lithography system
有权
用于在光刻系统中打印具有间距的干涉图案的系统和方法
- Patent Title: System and method for printing interference patterns having a pitch in a lithography system
- Patent Title (中): 用于在光刻系统中打印具有间距的干涉图案的系统和方法
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Application No.: US11443431Application Date: 2006-05-31
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Publication No.: US08934084B2Publication Date: 2015-01-13
- Inventor: Yevgeniy Konstantinovich Shmarev
- Applicant: Yevgeniy Konstantinovich Shmarev
- Applicant Address: NL Veldhoven
- Assignee: ASML Holding N.V.
- Current Assignee: ASML Holding N.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G03B27/52
- IPC: G03B27/52 ; G03F7/20

Abstract:
An interferometric lithography system produces a pattern having a sharp field edge and minimal optical path length difference. Light passes through a beamsplitter into an input prism. The two beams produced by the beamsplitter are reflected off respective surfaces of the input prism toward a substrate prism. The substrate prism is symmetric to the input prism such that the incidence angle at an image plane is approximately equal to the beamsplitter diffraction angle. Alternatively, light passes through a beamsplitter into a prism. The two beams produced by the beamsplitter are reflected off respective surfaces of the prism toward an output surface of the prism, such that the incidence angle at the output surface is approximately equal to the beamsplitter diffraction angle. A plurality of these interferometers can be stacked, each being optimized for a given pitch, such that the stack provides a variable pitch interferometry system.
Public/Granted literature
- US20070279642A1 System and method for printing interference patterns having a pitch in a lithography system Public/Granted day:2007-12-06
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