Invention Grant
- Patent Title: Circuitry including resistive random access memory storage cells and methods for forming same
- Patent Title (中): 电路包括电阻随机存取存储单元及其形成方法
-
Application No.: US13484326Application Date: 2012-05-31
-
Publication No.: US08934282B2Publication Date: 2015-01-13
- Inventor: Peter J. Kuhn , Feng Zhou
- Applicant: Peter J. Kuhn , Feng Zhou
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A method of forming a circuitry includes providing a substrate comprising a plurality of die. Each die includes a plurality of resistive random access memory (RRAM) storage cells. The method further includes concurrently initializing substantially all of the RRAM storage cells on the same wafer. Initializing can include applying a voltage potential across the RRAM storage cells.
Public/Granted literature
- US20130322152A1 CIRCUITRY INCLUDING RESISTIVE RANDOM ACCESS MEMORY STORAGE CELLS AND METHODS FOR FORMING SAME Public/Granted day:2013-12-05
Information query
